Landing Photocathode Gating Module (New Template)

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Datasheet

Overview

Gate modules are used in conjunction with Flat Pack, Wrap-Around or Bench Top power supplies
whenever gating is required.

A -200 V photocathode bias voltage is provided by the Gate Module, enabling photoelectrons to flow from the photocathode to the MCP when gated ON. When the gate module is gated OFF, a +50 V bias applied to the photocathode prevents photoelectrons from reaching the MCP, effectively turning off the Image Intensifier.

The gating rate and duration is controlled with an external TTL pulse and can be provided by Photek’s Gate Controller.

Ask Photek about the availability of circuit board versions and customisation for your specific requirements.

Specifications

SPECIFICATIONS

	GM10-50B	GM300-8U	GM300-3N/P
Normal State	OFF	ON or OFF	N = OFF / P = ON
Input Pulse Min Width Max Width Pulse Frequency Burst Rate Voltage	60 – 80 ns DC 10 kHz None 5 V TTL (high Z)	8 ns DC 300 kHz 2.5 MHz 5 V TTL (50 Ω)	13 ns DC 300 kHz 2.5 MHz 5 V TTL (50 Ω)
Output Pulse Min Width Max Width Delay Risetime Falltime Jitter (RMS)	50 ns FWHM DC 100 – 120 ns 30 – 50 ns 30 – 50 ns < 500 ps	8 ns FWHM DC 30 – 38 ns 5 – 13 ns adjustable 5 – 13 ns adjustable 40 – 70 ps	3ns FWHM DC 50 ns 1 ns 1 ns 30 ps
Voltage Off (Nominal) On (Nominal)	+50 V -200 V	+50 V -200 V	+50 V -200 V
Supply Voltage	+5 V DC	+12 V DC	+12 V DC
Typical Current Max	60 mA	180 mA	180 mA
In-Rush Current Max	500 mA	1 A	1 A
Length	53.25 mm	86 mm	86 mm
Length including connectors	70 mm	106 mm	106 mm
Width	35 mm	56 mm	56 mm
Height	28.5 mm	26 mm	26 mm
Weight	67 g	115 g	115 g
Operating Temperature	0ºC to 70ºC	0ºC to 70ºC	0ºC to 70ºC

This figure shows the relationship between gate speed and capacitive load for the GM300-3 Gate Module. The gate speed decreases as the area of the tube increases and as the gap between the photocathode and MCP decreases.